Our Services
Electrical Performance Testing
Reliability Test
Nondestructive Analysis
Laboratory
About ZF Testing
CN
Contact Us
Reliability Test
Environmental Stress Testing
Preconditioning
Biased Highly Accelerated Stress Test (BHAST)
High Temperature High Humidity Reverse Bias (H3TRB)
Unbiased Highly Accelerated Stress Test (UHAST)
Pressure Cooker Test (PCT)
Temperature Cycling (TC)
Intermittent Life Test (ILT)
Thermal Shock (TS)
High Temperature Storage (HTS)
Low Temperature Storage (LTS)
Accelerated Life Simulation Testing
High Temperature Reverse Bias (HTRB)
High Temperature Gate Bias (HTGB)
Dynamic High Temperature Reverse Bias (DHTRB)
Power Cycling
Power Cycling
Go Back
High Temperature Reverse Bias (HTRB) HTRB
Devices are subjected to maximum rated operating voltage for extended periods in high-temperature environments (e.g., near the engine compartment).
Test Description

Discrete device：AEC-Q101/MIL-STD-750/JESD22-A108C/JEP198/GJB548 Method1005/GJB360 Method108/GJB128A Method1031

Module：

IEC 60747-9:2007section 7.1.4.1(IGBT)

IEC 60747-8:2010 (MOSFET)

IEC 60747-2:2016 (diode)

Test Objective

Screens out defects in the chip passivation layer or edge termination structures (including passivation defects caused by mismatches in coefficients of thermal expansion among module materials); also eliminates defects arising from harmful ionic contamination introduced during manufacturing or from packaging materials.

Testing Equipment & Instruments