Our Services
Electrical Performance Testing
Reliability Test
Nondestructive Analysis
Laboratory
About ZF Testing
CN
Contact Us
Reliability Test
Environmental Stress Testing
Preconditioning
Biased Highly Accelerated Stress Test (BHAST)
High Temperature High Humidity Reverse Bias (H3TRB)
Unbiased Highly Accelerated Stress Test (UHAST)
Pressure Cooker Test (PCT)
Temperature Cycling (TC)
Intermittent Life Test (ILT)
Thermal Shock (TS)
High Temperature Storage (HTS)
Low Temperature Storage (LTS)
Accelerated Life Simulation Testing
High Temperature Reverse Bias (HTRB)
High Temperature Gate Bias (HTGB)
Dynamic High Temperature Reverse Bias (DHTRB)
Power Cycling
Power Cycling
Go Back
High Temperature Gate Bias (HTGB) HTGB
For MOSFETs/IGBTs, simulates prolonged application of gate drive voltage under high-temperature conditions.
Test Description

Discrete device：AEC-Q101/MIL-STD-750/JESD22-A108C/JEP198/GJB548 Method1005/GJB360 Method108/GJB128A Method1031

Module：

IEC 60747-9:2007section 7.1.4.1(IGBT)

IEC 60747-8:2010 (MOSFET)

IEC 60747-2:2016 (diode)

Test Objective

Under bias conditions, the gate-source voltage (Vgs) of SiC devices exhibits time-dependent drift. HTGB simulates accelerated operating conditions to verify device reliability and monitor gate reliability, and can also reveal material contamination introduced during the manufacturing process.

Testing Equipment & Instruments