Electrical Performance Testing
Verify whether the electrical parameters and logical functions of the chip comply with the design specifications.
Electrical Performance Verification Tests
Discrete Device Static Test -- Single-Point, Room Temperature
Current～200A , Voltage～2000V
DIODE
Vrrm
IR
VF
MOSFET
V(BR)dss
Idss
Rdson
Vsd
Vgs(th)
Igss
IGBT
V(BR)ces
Ices
Vcesat
Vge(th)
Iges
VF
gfs
Discrete Device C–V Test -- Single-Point, Room Temperature
100kHz～1MHz
MOSFET
Ciss
Coss
Crss
Rgint
IGBT
Cies
Coes
Cres
Rgint
Discrete Device Dynamic Parameter Testing-- Room Temperature
Current～1000A, Voltage～2000V, Short-circuit Current 3000A
DIODE
trr
Qrr
Err
Irr
MOSFET
td(on)
tr
ton
E(on)
di/dt(on)
dv/dt(on)
td(off)
tf
toff
E(off)
di/dt(off)
dv/dt(off)
IGBT
td(on)
tr
ton
E(on)
di/dt(on)
dv/dt(on)
td(off)
tf
toff
E(off)
di/dt(off)
dv/dt(off)
Power Module Static Test -- Single-Point, Room Temperature
Current 2～2000A, Voltage 200～3000V
DIODE
Vrrm
IR
VF
MOSFET
V(BR)dss
Idss
Rdson
Vsd
Vgs(th)
Igss
IGBT
V(BR)ces
Ices
Vcesat
Vge(th)
Iges
VF
gfs
Power Module Dynamic Parameter Testing -- Room Temperature
Current 20～2000A 、Voltage 50～1500V Integrated with seven sets of load inductor（20uH，50uH，100uH，200uH，500uH，1000uH，2000uH）
DIODE
trr
Qrr
Err
Irr
MOSFET
td(on
tr
ton
E(on)
di/dt(on)
dv/dt(on)
td(off)
tf
toff
E(off)
di/dt(off)
dv/dt(off)
IGBT
td(on)
tr
ton
E(on)
di/dt(on)
dv/dt(on)
td(off)
tf
toff
E(off)
di/dt(off)
dv/dt(off)
Power Module Short-Circuit Parameter Testing -- Room Temperature
Maximum Short-circuit Current 6000A
MOSFET
ISC
IGBT
ISC
Thermal Resistance Measurement
Thermal Resistance Measurement -- K-Factor (Temperature-Voltage Relationship); corresponding voltage parameters are as follows
DIODE
Forward Voltage Drop (VF)
MOSFET
Source-Drain Voltage (VSD)
IGBT
Collector-Emitter Voltage (VCE) or Gate-Emitter Voltage (VGE)
Test Equipment
Single-tube static testing rig
Single-tube dynamic testing machine
Lemsys Module Test Station